Xiaomi Launches 65 W Fast Charger based on Navitas GaNFast Power ICs


Navitas Semiconductor has announced that Xiaomi has launched their third GaNFast charger - a 65 W dual-output fast charger. The '65W 1A1C' has a USB-C output that can deliver up to 65 W to power laptops and fast-charge smartphones via USB-PD 3.0, QC and PPS fast-charging protocols, with an extra USB-A output up to 18 W to conveniently - and simultaneously - charge another phone or accessory such as headphones.

The new GaN charger can power the Xiaomi Mi11 from 0-100 % charge in only 45 minutes. Due to high-speed GaN power ICs, the charger achieves a world-class small size of only 69 cc with folding AC-pins – a 30% reduction vs Xiaomi's previous silicon-based designs - and a world-leading featherweight 104 g for ultimate portability. This top performance charger is available now from Xiaomi for a retail price of only 149 RMB (around US$23).

Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These 'GaNFast' power ICs become easy-to-use, high-speed, high-performance 'digital-in, power-out building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1B electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and EV.

"We believe that the success of any company comes from continuous technological innovation, corporate social responsibility, and the achievement of sustainable development goals," said Mr. Xiang Wang, President and Partner of Xiaomi. "We look forward to a bright future for Navitas."

Xiaomi's 65W 1A1C GaN charger was designed and manufactured by Nanjing Kuke Electronic Technology Co Ltd (Cuktech) and uses the NV6115 GaNFast power IC in a high-frequency, soft-switching topology, with robust 650/800 V rating and up to 2 MHz high-speed switching in a small-footprint 5 x 6 mm QFN package which is key to achieving high reliability and small size.

"GaNFast power ICs have been recognized and trusted by brand manufacturers and consumers for its simple design, ease-of-use, and ultra-high integration," said Dr. Wei Chen, CEO of Cuktech. "The high reliability of GaNFast power ICs also makes our products recognized and trusted by brand manufacturers and consumers. The cooperation with Navitas and Xiaomi will accelerate the expansion of consumer GaN charger market in the future and achieve a win-win situation for all parties."

"Xiaomi's openness to new materials and technologies, and its continued commitment to Gallium nitride (GaN), demonstrates Xiaomi's recognition of the advantages of GaN devices over traditional silicon devices," said Gene Sheridan, CEO of Navitas Semiconductors. "It is a long and successful partnership, introducing a series of world-class chargers, and celebrating mass production milestones, as when we presented Xiaomi with a special award for their receiving the 10,000,000th GaNFast power IC back in November 2020."

Navitas and Xiaomi will continue to work closely on technology. As one of the most important next-generation semiconductors, GaNFast power ICs not only enable Xiaomi's charger products to be smaller in size while maintaining the same power, but they also have a 10x lower CO2 emission footprint than legacy silicon chips, contributing to Xiaomi's carbon neutrality program.

Click here to learn more about NV6115.