UnitedSiC Expands its Gen IV SiC Technology with New 6 mOhm SiC FETs

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UnitedSiC has announced its industry-best 750 V, 6 mΩ SiC FETs with higher performance and higher efficiency. At an RDS(on) value of less than half the nearest SiC MOSFET competitor, the new 6 mΩ devices also provides a robust short-circuit withstand time rating of 5 ms.

The announcement includes 9 new device/package options in the 750 V SiC FET series, rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the TO-247-4L package while the 18, 23, 33, 44, and 60 mΩ devices also come in the TO-247-3L. Complemented by the already available 18 and 60 mΩ devices, this 750 V expanded series provides designers with more device options, enabling more design flexibility to achieve an optimum cost/efficiency trade-off while maintaining generous design margins and circuit robustness.

The Gen 4 SiC FETs from UnitedSiC are a ‘cascade of a SiC JFET and a co-packaged Silicon MOSFET. These together provide the full advantages of wide band-gap technology – high speed and low losses with the high-temperature operation, while retaining an easy, stable, and robust gate drive with integral ESD protection. The advantages are quantified by Figures of Merit (FoMs) such as RDS(on) x A, a measure of conduction losses per unit die area.

Gen 4 SiC FETs achieve the lowest values in the market at both high and low die temperatures. FoM RDS(on) x EOSS/QOSS is important in hard-switching applications and is half the nearest competitor value. FoM RDS(on) x COSS(tr) is critical in soft-switching applications and UnitedSiC device values are around 30 % less than competitor parts, rated at 650 V compared with UnitedSiC’s at 750 V. For hard switching applications, the integral body diode of SiC FETs is superior in recovery speed and forward voltage drop to competing Si MOSFET or SiC MOSFET technologies.

Other advantages incorporated into the Gen 4 technology are reduced thermal resistance from dying to the case by advanced wafer thinning techniques and silver-sinter die-attach. These features enable maximum power output for low die temperature rise in demanding applications.

With their latest improvements in switching efficiency and on-resistance, the new UnitedSiC SiC FETs are ideal for challenging, emerging applications. These include traction drives and on- and off-board chargers in electric vehicles and all stages of uni- and bi-directional power conversion in renewable energy inverters, power factor correction, telecoms converters, and AC-DC or DC-DC power conversion generally. Established applications also benefit from the use of the devices for an easy boost in efficiency with their backward compatibility with Si MOSFET and IGBT gate drives and established TO-247 packaging.

As Chris Dries, President and CEO of UnitedSiC, states “The UnitedSiC Gen 4 SiC FETs are unquestionably the performance leaders within competing technologies and set a new benchmark in wide bandgap switch technology. The new range additions now provide further options for all performance and budget specifications, and a wider range of applications.”

Click here to learn more about the UnitedSiC UJ4C/SC series of SiC FETs.

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UnitedSiC

  • Country: United States
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