EPC Introduces 40 V eGaN FET for High Power Density Applications


Efficient Power Conversion Corporation introduced the EPC2069 (1.6 mOhm typical, 40 V) eGaN FET to advances the performance capability of low voltage, off-the-shelf Gallium nitride transistors.

The EPC2069 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 10.6 sq.mm footprint for state-of-the-art power density. The EPC2069 can support 48 - 12 V DC-DC solutions ranging from 500 W to 2 kW and exceed 98 % efficiency. The use of eGaN devices in both the primary side and the secondary side are required to achieve maximum power density >4000 W/in3.

According to Alex Lidow, Co-founder and CEO of EPC, “The EPC2069 is perfectly designed for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V, which is becoming very common for the new 48 V – 54 V input servers required for high density computing applications such as artificial intelligence and gaming. This 40-volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”

Development Board

The EPC90139 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2069 eGaN FETs. This 2 x 2 inch (50.8 x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2069.

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