Navitas Exhibits GaN Power IC Solutions at Xiaomi Portfolio Demo Day

712370

Navitas Semiconductor, an industry leader in GaN power ICs, highlighted next-generation power and fast-charging advances at the 2021 Xiaomi Portfolio Demo Day, at the Xiaomi Tech Park, Beijing on October 24th. Xiaomi has grown to the #2 position in the global mobile phone market, and in March announced a $10 billion, 10-year investment into electric vehicles. Navitas enjoys a successful partnership with Xiaomi and was invited to the Demo Day to exhibit GaN power IC solutions and how they could be used in Xiaomi's broad portfolio, including mobile fast chargers, home appliances, tools, and EVs.

Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon, and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas' GaNFast power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast, and efficient performance.

At the exhibition, Jun LEI, Founder, Chairman, and CEO of Xiaomi Group, Xiang WANG, Partner and President of Xiaomi Group, Feng ZHANG, Partner and Senior Vice President of Xiaomi Group, Shiwei LIN, Vice President and CFO of Xiaomi Group, and Changshu SUN, Partner of Xiaomi Industrial Investment Department, visited the Navitas display. They discussed the latest GaNFast technology, saw existing GaNFast-powered Xiaomi mobile fast chargers including the world's smallest 65 W and new 55 W for the latest Xiaomi Civi phone, and reviewed product and application roadmaps.

As of October 2021, Navitas has shipped over 30 million GaNFast power ICs with zero reported GaN field failures, demonstrating excellent quality and reliability in the mobile market, and paving the way for expansion into consumer, solar, energy storage, data center, and EV.

Navitas showcased a new 6.6 kW onboard charger (OBC) demo at the exhibition, with wide-range 240V-420 V output, in only 222 x 168 x 60 mm and achieves a power density of 3 kW/liter – up to 3x higher power density than legacy-silicon-based OBCs. This means GaN power ICs charge 3x faster than old silicon systems of identical size. The Navitas OBC roadmap continues to over 5 kW/l.

Navitas estimates that an upgrade from silicon to GaN would accelerate EV adoption by 3 years, saving 20%/yr of road-sector CO2 emissions by 2050.

At lower powers, Navitas also showcased leading-edge fast chargers from 20 W to 300 W, and a new data center power supply rated at 1,300 W and achieving world-leading 'titanium-class' efficiency performance.

President of Xiaomi Corporation, Mr. Xiang WANG said, "The annual Xiaomi Technology Demo Day is a rare opportunity for Xiaomi to communicate with the upstream industry. We are very happy to see the rapid progress of our partners. As one of the important partners of Xiaomi, Navitas is also continuously developing and making progress in GaN power ICs. Together, we have launched Xiaomi's 55 W GaN fast charge charger and 65 W 1A1C GaN fast charger, and other excellent products. We look forward to working with Navitas and continue to launch more amazing technology products with an unprecedented product experience that will surprise our consumers."

"Navitas thanks Xiaomi not only for the honor of participating in this next-generation technology exhibition but also for its long-term investment and partnership," said Charles (Yingjie) ZHA, VP and general manager of Navitas China. "Xiaomi's market vision and Navitas' GaN power IC roadmap are perfectly aligned, from 55 W smartphone chargers to multi-kW EV applications."