Aehr Test Systems Joins PowerAmerica Institute to Support SiC and GaN Technologies


Aehr Test Systems, a worldwide supplier of semiconductor test and reliability qualification equipment, has announced that it has joined the PowerAmerica Institute (PowerAmerica), a public-private research initiative dedicated to accelerating the adoption of high performing, next generation silicon carbide (SiC) and gallium nitride (GaN) power electronics.

The collaboration will result in bringing next generation silicon carbide and gallium nitride power electronics to markets faster, reducing cost and risk factors associated with new generation technologies. An organization that brings together the semiconductor manufacturers and the companies that use semiconductor power electronics in their products, PowerAmerica Institute is well placed as an information hub. With the backing of the U.S. Department of Energy and the engagement of top researchers, knowledge and processes can be provided to educate the American workforce and provide more innovative product designs.

“Wafer test and burn-in equipment play a key role in high volume SiC and GaN production, as wafer level stress testing contributes to highly reliable SiC and GaN power electronic products," said Victor Veliadis, Executive Director of PowerAmerica. "We welcome Aehr to the PowerAmerica family and look forward to working with them to accelerate the adoption of wide bandgap technology.”

Gayn Erickson, President and CEO of Aehr Test Systems, commented, “Aehr Test is excited about becoming the newest member of PowerAmerica and joining the other prestigious organizations in advancing wide bandgap (WBG) Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies and accelerating the next generation of power electronics. We look forward to joining some of the brightest minds in WBG research, device manufacturing, power electronics and systems, with the objective of reducing cost and the inherent risks in this new technology.

“Wide bandgap semiconductors permit devices to operate at much higher temperatures, voltages, and frequencies, making the power electronic modules using these materials significantly more powerful and energy efficient than those made from conventional semiconductor materials. The benefits of bringing the more robust and cost effective SiC and GaN technologies to market will drive longer range in electric vehicles, along with energy savings in consumer, data center and industrial processes and help deliver renewable energy onto the electric grid.”