New Yorker Electronics Introduces Dual N-Channel MOSFET with 2 kV ESD Protection


New Yorker Electronics has announced the availability of its new Good-Ark Semiconductor SSF2418E 6A/20V Dual N-Channel MOSFET with ESD protection in the SOT-23-6L package. The SSF2418E utilizes the latest trench technologies and advanced process techniques to achieve excellent RDS(ON), low gate charge and a high repetitive avalanche rating.

Equipped with ESD protection up to 2KV, this Halogen-free device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its common drain configuration. Used in DC-DC conversion, load switching and battery protection, additional benefits include its high energy efficiency, fast switch speed and low input and output leakage. It is also available in the TSSOP-8 package.

Key features & benefits:

  • Advanced trench MOSFET process technology
  • Ultra-low on-resistance with low gate charge
  • Fast switching and reverse body recovery
  • 150°C operating temperature
  • Lead free product

Key applications:

  • PWM
  • Load Switching
  • General Purpose

Click here to learn more about the SSF2418E from New Yorker Electronics.