Qorvo Announces 1200 V SiC MOSFETs for Induction Heating and Power Supply Applications

Qorvo Announces 1200 V SiC MOSFETs for Induction Heating and Power Supply Applications

Qorvo, a leading provider of innovative RF solutions that connect the world, announced a next-generation series of 1200 V Silicon Carbide (SiC) Field Effect Transistors (FETs) with industry-leading figures of merit in on-resistance. The new UF4C/SC series of 1200 V Gen 4 SiC FETs are ideally suited for mainstream 800 V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC/DC solar inverters, as well as welding machines, uninterruptible power supplies, and induction heating applications.

Anup Bhalla, Chief Engineer of Power Devices, UnitedSiC/Qorvo, said: “Expanding our 1200 V range with higher performance Gen4 options allows us to better serve the engineers who are moving their bus designs to 800 V. In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”

Highlighting the new UF4C/SC series are the following best-in-class SiC FET figures of merit:

All RDS(on) options (23,30,53, and 70 milliohm) are offered in the industry-standard 4-lead kelvin source TO-247 package, providing cleaner switching at higher performance levels. The 53 and 70 milliohm devices are also available in the TO-247 3-lead package. This series of parts have excellent reliability, based on the well-managed thermal performance, which is a result of an advanced silver-sinter die attach and advanced wafer-thinning process.

All 1200 V SiC FETs are included in FET-Jet Calculator, a free online design tool that allows for instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.

Pricing for the new 1200 V Gen 4 SiC FETs ranges from $5.71 for the UF4C120070K3S to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors.

Qorvo's Silicon Carbide and power management products charge, power, and control a wide range of industrial, commercial, and consumer applications.

Click here to learn more about UF4SC120023K4S

Click here to learn more about UF4SC120030K4S

Click here to learn more about UF4C120053K4S     

Click here to learn more about UF4C120070K3S


  • Country: United States
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