SemiQ announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200 V 40 mΩ SiC MOSFET, expanding its portfolio of SiC power devices. This MOSFET complements the company’s existing 80 mΩ SiC MOSFETs and SiC rectifiers at 650 V, 1200 V, and 1700 V.
SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.
SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies, and data centers, and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight, and cooling requirements.
Michael Robinson, President and General Manager at SemiQ said, “Many thanks to those employees, associates, supporters, and vendors who have worked tirelessly to build and qualify our latest SiC Power MOSFETs.”
SemiQ’s new 1200 V 40 mΩ SiC MOSFET is available in TO-247-4L and TO-247-3L packages and will soon be available in multiple module packages.
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