Editorial Team - everything PE
Aug 9, 2023
Gate-to-Source Leakage Current (IGSS) is defined as the leakage current that flows between the gate and source terminals of a GaN transistor when it is in the "off" state. Ideally, in this state, the transistor should behave as an open switch, allowing negligible current to flow between the gate and source. However, in practical scenarios, there exists a small leakage current due to various physical mechanisms within the semiconductor device.
IGSS is a critical parameter that affects the power consumption, reliability, and switching performance of GaN FETs (Field Effect Transistors). High IGSS can lead to increased power dissipation and device self-heating, impacting the overall efficiency and lifespan of the device. Therefore, minimizing IGSS is crucial for optimizing the performance of GaN FETs.
Factors Causing Gate-to-Source Leakage Current
Measures to reduce gate-source leakage current
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