Toshiba has launched a150 V N-channel power MOSFET “TPH9R00CQH” that uses the latest generation process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment including those deployed in data centers and communications base stations.
TPH9R00CQH has a drain-source on-resistance about 42% lower than TPH1500CNH, a 150 V product that uses the current generation process, U-MOSVIII-H. Optimization of the new MOSFET structure has improved the trade-off between the drain-source on-resistance and two charge characteristics, realizing excellent low-loss characteristics. In addition, spike voltage between the drain and source at switching operation is reduced, helping to lower electromagnetic interference (EMI) in switching power supplies. Two types of surface mount packages are available: SOP Advance and the more popular SOP Advance(N).
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which can verify the circuit function in a short time, the highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available.
Toshiba will expand its lineup of power MOSFETs that improve equipment power supply efficiency by cutting losses, helping to reduce power consumption.
Key features
- Excellent low-loss characteristics
- Low On-resistance: Rds(ON)=9.0 milliohm (max) at Vgs=10 V
- High channel temperature rating: Tch (max)=175 °C
Key applications
Click here to learn more about TPH9R00CQH
Click here to learn more about TPH1500CNH
