Toshiba Introduces MOSFET Gate Driver ICs for Wearables

Toshiba has added five products to its lineup of MOSFET gate driver ICs in the TCK42xG Series for mobile devices such as wearables. The new products in the series are equipped with an overvoltage lockout function and control the gate voltage of an external MOSFET according to the input voltage.

The new products are TCK420G for 24 V power lines; TCK422G and TCK423G for 12 V power lines; TCK424G for 9 V power lines; and TCK425G for 5 V power lines along with the already launched TCK421G for 20 V power lines.

With this addition, the TCK42xG series now allows users to select a gate-source voltage from two types, 10 V and 5.6 V, offering coverage of more MOSFETs. In addition, the lineup of the different detection voltages for the input overvoltage lockout function allows the products to be used for power lines from 5 V to 24 V. When combined with an external back-to-back MOSFET, they are also suitable for configuring a load switch circuit or a power multiplexer circuit with a reverse current blocking function. Furthermore, with their built-in charge pump circuit supporting a wide range of input voltages, from 2.7 V to 28 V, they provide a stable voltage between the gate and source of an external back-to-back MOSFET with intermittent operation. This allows large currents to be switched.

Housed in a WCSP6G package, one of the smallest in the industry, the TCK42xG series realizes high-density mounting for small devices, such as wearables and smartphones, helping to reduce their footprint.

Toshiba has also developed a “Power multiplexer circuit” Reference Design, a reference design example for a power multiplexer that utilizes the functions of TCK42xG.

Key features

Gate-source voltage setting (5.6 V, 10 V) depending on input voltage with a built-in charge pump circuit
Over-voltage, lockout supports 5 V to 24 V
Low input OFF current: IQ (OFF) = 0.5 μA (max) at VIN= 5 V

Key applications