Toshiba Electronic Devices & Storage has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs that deliver low on-resistance and significantly reduced switching loss.
The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%, allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%. This cuts the switching loss by about 20% and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.
Toshiba will continue to expand its lineup of power devices and enhance its production facilities and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.
Key features
- Low on-resistance per unit area (RDS(ON)A)
- Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
- Low diode forward voltage: VDSF= -1.35 V (typ.) at VGS= -5 V
Key applications
- Switching power supplies (servers, data center, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
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