Power devices are being optimized since energy saving is becoming a top priority thus driving demand for Gallium Nitride devices. Gallium Nitride devices offer high output power in a small physical package, and high efficiency at ultra-high and microwave radio frequencies. Gallium Nitride semiconductor devices are employed in high-efficiency power supplies in servers and other IT equipment, and the rapidly expanding hybrid electric vehicles and electric vehicles. In this article, everything PE has listed some interesting Power Diodes that were trending on the website.
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650 V Enhancement Mode GaN Power Transistor
The SGT120R65AL from STMicroelectronics is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source breakdown voltage of 650 V and a gate threshold voltage of 1.8 V. It has a continuous drain current of 15 A and drain-source resistance of 75 milli-ohms. This transistor offers extremely low conduction losses and has a high current capability. It has extremely low capacitances and provides an ultra-fast switching operation to enable high power density and unbeatable efficiency performances. This power transistor has a zero reverse recovery charge and is based on GaN HEMT technology. It is available in a surface-mount package that measures 6.6 × 5.3 × 1 mm and is ideal for adapters for tablets, notebooks, USB Type-C PD adapters, quick chargers, and wireless chargers. Read more.
650 V GaN Power Transistor for Industrial Applications
The TP65H070LDG from Transphorm is a GaN Power Transistor. It has a drain-source voltage of 650 V with a drain-source resistance of 72-148 milli-ohms and a gate threshold voltage of 3.3 to 4.8 V. This GaN transistor has a continuous drain current of 16 to 25 A and a pulsed drain current of 120 A. It combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, offering superior reliability and performance. This transistor offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. It has dynamic drain-source on-resistance, transient over-voltage capability, very low reverse recovery charge, and reduced crossover loss. Read more.
Rad-Hard GaN Power Transistor for Deep Space Applications
The EPC7019 from Efficient Power Conversion is a Radiation Hardened GaN Power Transistor that is specifically designed for critical applications in high-reliability or commercial satellite space environments. This enhancement-mode transistor has a drain-source voltage of over 40 V and a gate threshold voltage of 1.4 V. It has a pulsed drain current of 530 A and a drain-source resistance of 1.5 milli-ohms. The transistor offers superior reliability performance in a space environment because there are no minority carriers for a single event, and as a wideband semiconductor, there is less displacement for protons and neutrons. It has exceptionally high electron mobility and a low-temperature coefficient resulting in very low drain-source resistance. The transistor provides a low gate charge and supports a faster switching speed. Read more.
650 V GaN Power Transistor for Industrial and Datacom Power
The GAN063-650WSA from Nexperia is a GaN Power Transistor. It has a drain-source voltage of 650 V with a drain-source resistance of 50-60 milliohms and a gate-source voltage of ±20 V. This GaN transistor has a continuous drain current of up to 34.5 A and power dissipation of up to 143 W. It is a normally-off transistor that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. This transistor offers an ultra-low reverse recovery charge and has a high gate threshold voltage for very good gate bounce immunity. It delivers very low source-drain voltage in reverse conduction mode. This RoHS-compliant transistor is available in a single-ended through-hole package that measures 20.45 x 15.6 x 4.95 mm and is ideal for hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, UPS inverters, and servo motor drives applications. Read more.
40 V GaN Power Transistor for Space Applications
The EPC7019G from EPC Space is a GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It has a gate threshold voltage of 0.8 to 2.5 V and a drain-source voltage of 40 V with a drain-source resistance of 3.7 milliohm. It has a gate-source voltage of -4 to 6 V. This GaN transistor has a continuous drain current of 95 A and a pulsed drain current of 530 A. It has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain-to-source resistance. The lateral structure of the die provides a very low gate charge and offers extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, and higher efficiencies. This transistor is available in a surface-mount package that measures 8.0 x 5.6 mm and is ideal for applications such as satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, nuclear facilities, and rad-hard motor controllers. Read more.
100 V E-Mode GaN Power Transistor for Charging Applications
The GS61008P from GaN Systems is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of less than 100 V and a gate-source threshold voltage of 1.7 V. This GaN transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 140 A. It has a drain-source on-resistance of 7 mΩ. This GaN transistor is manufactured based on patented Island Technology and uses GaNPX packaging that offers low inductance and low thermal resistance. It has a bottom-side cooled configuration that offers very low junction-to-case thermal resistance. This RoHS 3 (6 + 4) compliant transistor is available as a die that measures 7.6 x 4.6 mm and is ideal for energy storage systems, AC-DC converters, UPS, industrial motor drives, fast battery charging, Class D audio amplifiers, traction drive, robotics, and wireless power transfer applications. Read more.
Enhancement Mode GaN-on-Si Power Transistor for Fast Charging Applications
The INN650D140A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for AC-DC converters, DC-DC converters, and totem poles PFC, fast battery charging, and high density and efficient power conversion applications. It has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 140 mΩ. It has a continuous drain current of up to 17 A and a pulsed drain current of less than 32 A. This REACH-compliant transistor is a normally-off power switch and has a very high switching frequency. It offers zero reverse recovery charge, a low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge protection to prevent high electric field-related damages. It is available in a surface-mount package that measures 8 x 8 mm. Read more.
650 V GaN-on-Si Power Transistor for Data Centers & Gaming Applications
The CGD65A055S2 from Cambridge GaN Devices is an Enhancement Mode GaN-on-Si Power Transistor that is designed to exploit the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronic applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 77 mΩ. This transistor has a continuous drain current of up to 27 A. It is based on CGD’s ICeGaN gate technology that enables compatibility with virtually all available gate drivers and controller chips. This GaN-on-Si transistor consists of a built-in current sense function that eliminates the need for a separate current sensing resistor and its associated efficiency losses. It can be directly soldered to the large copper area of the ground plane, thereby improving the thermal performance and simplifying the thermal design. Read more.
800 V GaN Power IC for Lighting & Telecom Applications
The NV6113 from Navitas Semiconductors is an Enhancement Mode GaN Power IC that is optimized for high-frequency, soft-switching topologies. It has a drain-source voltage of up to 800 V and a drain-source on-resistance of less than 420 milli-ohms. This transistor has a continuous drain current of up to 5 A and a pulsed drain current of less than 10 A. It monolithically integrates FET, drive, and logic circuits to create an easy-to-use, digital-in, power-out high-performance power-train building block, thereby enabling designers to develop the fastest, smallest, and most efficient power converters. This REACH-compliant transistor offers the highest dV/dt immunity and minimized package inductance that allows the designers to exploit Navitas’ GaN technology for achieving breakthrough power density and efficiency. The NV6113 ensures zero reverse recovery charge and provides electrostatic discharge (ESD) protection. Read more.
650 V N-Channel Enhancement Mode GaN Transistor
The AONV070V65G1 from Alpha & Omega Semiconductor is an N-Channel Enhancement Mode GaN Transistor that is ideal for resonant topologies, server power supplies, and high-frequency converter applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 90 milli-ohms. This transistor has a continuous drain current of up to 16 A and power dissipation of less than 125 W. It is based on a normally-off design and provides low inductance in a compact package. This GaN power transistor offers ultra-low gate charge and zero reverse recovery charge. It is available in a surface-mount package that measures 8 x 8 mm. Read more.
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