EPC Introduces 80 V Automotive Qualified GaN FET for High Resolution Lidar Systems

EPC Introduces 80 V Automotive Qualified GaN FET for High Resolution Lidar Systems

Efficient Power Conversion, a world leader in enhancement-mode gallium nitride (eGaN) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48 - 12 V DC-DC conversion, and low inductance motor drives.

Lower switching losses, lower conduction losses, zero reverse recovery losses, and lower drive power enable high-frequency designs at high efficiency. Combined with an extremely tiny footprint, these factors enable state-of-the-art power density.

The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3 ns, results in a longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.

“The EPC2252 makes an ideal switch for automotive lidar, low inductance motors, and 48 V DC-DC conversions,” according to Alex Lidow, EPC’s co-founder and CEO. “EPC is committed to the automotive market with a growing family of devices that enable highly efficient, low-cost vehicle electrification and autonomous driving.”

Click here to learn more about EPC2252