ROHM Introduces N-Channel MOSFETs for Industrial and Consumer Applications

ROHM has developed N-channel MOSFETs - RS6xxxxBx / RH6xxxxBx series, 13 part numbers, suitable for applications operating on 24V/36V/48V power supplies such as base stations, servers, and motors for industrial and consumer equipment.

In recent years, worldwide power consumption has been on the rise – driving the need for industrial equipment such as servers and base stations along with various motors to become more efficient. In a number of these applications that utilize medium voltage MOSFETs, used in a variety of circuits, manufacturers are demanding even lower power losses. However, general MOSFETs are characterized by two main parameters leading to power losses: ON resistance (R_DS(on)), which is inversely proportional to chip size, and Gate-drain charge (Q_gd) that increases proportionally with chip size, making it challenging to achieve both. ROHM has improved the trade-off between the two by adopting copper clip connections and improving the gate structure.

The new MOSFETs achieve an industry-leading R_DS(on) of 2.1mΩ – approx. 50% lower than conventional – by increasing device performance and adopting the HSOP8/HSMT8 package featuring low-resistance copper clip connections. What’s more, improving the element gate structure reduces Qgd, which is generally in a trade-off relationship with R_DS(on), by approx. 40% vs conventional products (comparing typical values for R_DS(on) and Q_gd for 60 V HSOP8 package products). These improvements reduce both switching and conduction losses, greatly contributing to higher application efficiency. As an example, when comparing the efficiency of a power supply evaluation board for industrial equipment, ROHM’s new products achieve an industry-leading efficiency of approx. 95% (peak) in the output current range during steady-state operation.