Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment - used for such as data centers and communication base stations - and expanded the lineup. The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 mΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.
The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In the case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering the power consumption of equipment.
Key features
- Latest generation process U-MOSX-H series
- Low On-resistance:
TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V)
- High channel temperature: Tch (max)=175 °C
Key specifications
Key applications
- Switching power supplies (high-efficiency AC-DC converters, high-efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
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