IGBT or Insulated Gate Bipolar Transistor is a type of power semiconductor device used in electronic systems for switching and amplifying electrical signals. IGBTs combine the features of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), offering the high input impedance of a MOSFET and the low conduction losses of a BJT. In this article, everything PE has listed some interesting IGBTs that were trending on the website.

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1200 V Buck Chopper Trench + Field Stop IGBT

The APTGL475SK120D3G from Microchip Technology is a Buck Chopper Trench + Field Stop IGBT Power Module that is ideal for AC and DC motor control and switched-mode power supply applications. It has a collector-emitter breakdown voltage of up to 1200 V, a saturated collector-emitter voltage of 1.8 V, and a gate-emitter voltage of ±20 V. This RBSOA-rated IGBT module has a continuous collector current of less than 610 A and a gate-emitter leakage current of up to 400 nA. It has a power dissipation of less than 2080 W. Read more.

1200 V Field Stop Trench IGBT for Inverter Applications

The 2MBI800XNE120-50 from Fuji Electric is an IGBT that is ideal for inverter for motor drives, AC and DC servo drives, UPS, wind turbines and PV power conditioning systems. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 2.9 V, and a gate-emitter threshold voltage of 6.5 V. This IGBT has a DC collector current of up to 800 A and a gate-emitter leakage current of less than 300 nA. Read more.

2500 V Single Switch IGBT for Power Supply Applications

The IXGH25N250 from Littelfuse is a single-switch IGBT Module that is ideal for pulse circuits, capacitor discharge circuits, high-voltage power supplies, high-voltage test equipment, laser & X-ray generators, and capacitor discharge applications. It has a collector-to-emitter voltage of up to 2500 V and a saturated collector-to-emitter voltage of 2.9 V. This IGBT has a DC collector current of up to 60 A and a gate-emitter leakage current of less than +100 nA. Read more.

 1200 V Field Stop Trench IGBT

The RGS30TSX2D from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for PV inverters, power conditioners, general inverters, and UPS applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate-emitter voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of up to 30 A and gate-emitter leakage current of less than 500 nA. Read more.

1250 V High-Speed Switching IGBT for UPS & Welding Applications

The RBN25H125S1FPQ-A0 from Renesas is a Trench IGBT that is ideal for welding, photovoltaic inverters, power converter systems, and UPS applications. It has a collector-emitter breakdown voltage of up to 1250 V, collector-emitter saturation voltage of 1.8 V, and gate-emitter voltage of less than 30 V. This IGBT has a collector current of up to 50 A and a gate-emitter leakage current of less than 1 µA. It has a power dissipation of up to 223 W. Read more.

1200 V Trench Field Stop Discrete IGBT

The FGY100T120RWD from onsemi is a Trench Field Stop Discrete IGBT that is ideal for general applications requiring high power switches, motor control, and UPS applications. It has a collector-emitter voltage of up to 1200 V and a gate-emitter voltage of ±20 V. This IGBT has a DC collector current of less than 200 A, a DC forward current of up to 200 A, and a gate-emitter leakage current of ±400 nA. It has a power dissipation of less than 1071 W. Read more.

Single Switch N-Channel Enhancement Mode IGBT

The DIM1200FSM12-A000 from Dynex Semiconductor is a Single Switch N-channel Enhancement Mode IGBT module that is ideal for high-reliability inverters, motor controllers, and traction drives applications. It has a collector-to-emitter voltage of up to 1200 V and a saturated collector-to-emitter voltage of 2.2 V. This IGBT has a DC collector current of less than 1200 A. Read more.

750 V Automotive Qualified IGBT

The AIKQ200N75CP2 from Infineon Technologies is an Automotive Qualified IGBT that has a collector-emitter voltage of 750 V. It has a gate-emitter voltage of ±20 V and a saturated collector-emitter voltage of up to 1.5 V. This IGBT has a DC collector current of 200 A and a gate-emitter leakage current of up to 100 nA. Read more.

600 V Field-Stop Trench IGBT for UPS & Motor Control Applications

The STGD5H60DF from STMicroelectronics is a Field-Stop Trench IGBT that is ideal for UPS, PFC, and motor control applications. It has a collector-emitter breakdown voltage of over 600 V, collector-emitter saturation voltage of up to 1.6 V, and gate-emitter voltage of less than 20 V. This IGBT has a collector current of up to 10 A and a gate-emitter leakage current of less than 250 nA. Read more.

1200 V IGBT for Power Supplies & Motor Control Applications

The CM1400HA-24S from Mitsubishi Electric is an IGBT that is ideal for power supplies and motor control applications. It has a collector-emitter breakdown voltage of over 1200 V, collector-emitter saturation voltage of up to 2.35 V, and gate-emitter voltage of less than 20 V. This IGBT has a DC collector current of up to 1400 A and a gate-emitter leakage current of less than 0.5 µA. Read more.

1200 V Field Stop Trench IGBT

The SK 15 DGDL 12T4 ET from Semikron is a Field Stop Trench IGBT. It has a collector-emitter breakdown voltage of over 1200 V, collector-emitter saturation voltage of up to 2.25 V, and gate-emitter voltage of less than 5.8 V. This IGBT has a collector current of up to 27 A. It is available in a screw mount package that measures 55 x 31 x 15.43 mm. Read more.

600 V Single Switch IGBT for Power Factor Correction Applications

The RJQ6008BDPM from Renesas is a Single Switch IGBT that is ideal for power factor correction (PFC) applications. It has a collector-emitter voltage of up to 600 V, a gate-emitter voltage of ±30 V, and a saturated collector-emitter voltage of 1.8 V. This IGBT has a collector current of up to 13 A and a gate-emitter leakage current of ±1 µA. It consists of a built-in fast recovery diode and provides fast switching in a single package. Read more.

650 V IGBT for AC and DC Servo Drive Amplifier Applications

The GD30PJX65L2S from StarPower is a IGBT that is designed for general inverters, UPS and AC,DC servo drive amplifier applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.45 V, and a gate-emitter threshold voltage of 5.8 V. This IGBT has a DC collector current of up to 55 A and a gate-emitter leakage current of less than 400 nA. Read more.

700 V Silicon N-channel IGBT

The MBB800TV7A from Hitachi is a Silicon N-channel IGBT with high speed and low loss features. It has a collector-emitter voltage of less than 700 V, a saturated collector-emitter voltage of 1.8 V, and a gate-emitter threshold voltage of 6.7 V. This IGBT has a DC collector current of up to 800 A and a gate-emitter leakage current of less than 500 nA. Read more.

600 V IGBT for Power Conversion Applications

The VS-GT250SA60S from Vishay is a IGBT that is designed for increased operating efficiency in power conversion applications such as UPS, SMPS, TIG welding, induction heating. It has a collector-emitter voltage of less than 600 V, a saturated collector-emitter voltage of 1.16 V, and a gate-emitter threshold voltage of 4.9 V. This IGBT has a continuous collector current of up to 359 A and a gate-emitter leakage current of less than 250 nA. Read more.

650 V IGBT for Motor Drives and Hard Switching Applications

The AOD5B65MQ1E from Alpha & Omega Semiconductor is a IGBT with soft and fast recovery anti-parallel diode for motor drives, home appliances and other hard switching applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 2.15 V, and a gate-emitter threshold voltage of 4.9 V. This IGBT has a continuous collector current of up to 10 A and a gate-emitter leakage current of less than 10 µA. Read more.

600 V Field Stop Trench IGBT for Servo Motor Applications

The NGW30T60M3DF from Nexperia is a Field Stop Trench IGBT that is ideal for motor drives for industrial and consumer appliances such as servo motors for robotics,UPS inverter, photovoltaic (PV) strings, EV charging, induction heating, and welding applications. It has a collector-emitter breakdown voltage of over 600 V, a saturated collector-emitter voltage of up to 1.7 V, and a gate-emitter threshold voltage of up to 7 V. This hard-switching IGBT has a collector current of up to 75 A, a forward current of less than 80 A, and a gate-emitter leakage current of 200 nA. Read more.

650 V Trench and Field Stop IGBT for Hard and Soft Switching Applications

The MIW30N65FLA from Micro Commercial Components is a Trench and Field Stop IGBT that is suitable for hard and soft switching applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.8 V, and a gate-emitter threshold voltage of 5 V. This IGBT has a DC collector current of up to 60 A and a gate-emitter leakage current of less than 100 nA. Read more.

1100 V IGBT for Voltage-Resonant Inverter Switching Applications

The GT60PR21 from Toshiba is a IGBT that is dedicated to voltage-resonant inverter switching applications. It has a collector-emitter voltage of less than 1100 V, a saturated collector-emitter voltage of 2 V, and a gate-emitter threshold voltage of up to 7. 5 V. This IGBT has a DC collector current of up to 60 A and a gate-emitter leakage current of less than 100 nA. Read more.

600 V Trench IGBT for Inverter Applications

The MGD623N from Sanken Electric is a Trench IGBT that is ideal for microwave oven, IH cooker, and inverter circuits. It has a collector-emitter voltage of less than 600 V, a saturated collector-emitter voltage of 2.3 V, and a gate-emitter threshold voltage of 4.5 V. This IGBT has a continuous collector current of up to 50 A and a gate-emitter leakage current of less than 500 nA. Read more.

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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of IGBT we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.