PANJIT has introduced a new line of P-channel and N-channel power MOSFETs designed to enhance the performance of automotive electronic systems. AEC-Q101 qualified and with an operating junction temperature of 175°C, the P-channel MOSFET is ideal for design engineers looking for reliability and circuit simplicity. These MOSFETs minimize RDS(ON), maximize avalanche immunity, and are available in DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263, and TO-263-7L packages.
PANJIT's N-channel power MOSFETs employ state-of-the-art trench technology to provide an excellent coefficient of performance (FOM), low RDS(ON), and capacitance. These MOSFETs are available in DFN3333-8L, DFN5060-8L, DFN5060B-8L, and TO-252AA packages, contributing to efficient and reliable PCB designs.
Combining innovation and reliability, PANJIT's low-voltage MOSFETs simplify power supply design circuits and meet the changing needs of automotive design engineers. These components demonstrate PANJIT's commitment to building the future of car electronics by providing optimal solutions for high-performance automotive applications.
Key features of 30V and 40V automotive grade P-channel MOSFETs
- P-channel enhanced logic-level MOSFET
- Low RDS(ON) minimizes conduction losses
- Low thermal resistance package
- Passes 100% UIS testing
- Electrostatic protection (ESD) features
- AEC-Q101 certified and PPAP compliant
- 175°C high temperature Operation
- High current TO-263-7L package
Key features of 30V and 40V automotive grade N-channel MOSFETs
- 40V N-channel MOSFET
- Low RDS(ON) to minimize conduction losses
- Low FOM to minimize driver losses
- Standard and logic levels available
- AEC-Q101 certified and PPAP compliant
- 175°C high temperature motion
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