PANJIT Semiconductor Introduces Bridge Rectifier Diodes for High Power Applications

PANJIT, a leading semiconductor provider, introduced its latest Ultra-Low V_F Bridge Rectifier Series. Engineered with oxide planar chip junction technology and featuring PI protection layers, this series is poised to redefine the standards of power efficiency and reliability across various applications.

PANJIT's Ultra-Low V_F Bridge Series stands out for its superior performance and durability. Users can experience unparalleled efficiency with an incredibly low forward voltage of 0.74 V at 125°C, which reduces energy waste and optimizes power utilization. With a minimal actual leakage current of 20 µA at 125°C, this bridge rectifier series guarantees efficient power transmission, enhancing system reliability and stability, even in the most demanding conditions.

This rectifier series benefits from the superior wafer fabrication process stability offered by PANJIT's Ultra-Low V_F Bridge Series. Its stability translates to consistent, high-quality performance in a wide array of applications, including server power, AI power, telecom power, gaming power, and 80+ platinum/titanium PC power, among other high-power applications.

PANJIT's Ultra-Low V_F Bridge Series is engineered with the environment in mind. The efficiency optimization not only benefits the products’ bottom lines but also contributes to a greener, more sustainable planet. The series is also fully compliant with EU RoHS 2.0 standards and halogen-free according to the IEC 61249 standard, this series minimizes its ecological footprint. Choosing PANJIT means choosing sustainability.

PANJIT's Ultra-Low V_F Bridges stand out with three groundbreaking features that set a new standard for bridge rectifiers in the industry and pave the way for powerful performance technology and a sustainable future for active components.

Highest Forward Current in the Industry (I_F = 35 A)
Lowest Forward Voltage in the Industry (V_F = 0.74 V)
Maximum Operating Junction Temperature of 175 °C (T_J Max.), maximize the efficiency of high-power applications and improve heat dissipation capabilities.