
Innoscience Technology, a pioneer in the design, development, and manufacture of reliable and high-performance GaN devices, has launched a 40 V Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.
Key features
- Bi-directional blocking capability
- GaN-on-Silicon E-mode HEMT technology
- Ultra-low on Resistance
Key applications
- High-side load switch
- OVP protection in smartphone USB port
- Switch circuits in multiple power supplier systems
Reference Design for OVP Application

Key specifications
- Vin:8 ~ 22 V
- Controller IC: SC8571
- Iomax:14 A
Key applications
- Bi-directional switch
- OVP Application
- OCP Application
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