Innoscience Launches 40 V GaN-on-Silicon Power Transistor for Consumer Electronics

Innoscience Launches 40 V GaN-on-Silicon Power Transistor for Consumer Electronics

Innoscience Technology, a pioneer in the design, development, and manufacture of reliable and high-performance GaN devices, has launched a 40 V Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.

Key features

  • Bi-directional blocking capability
  • GaN-on-Silicon E-mode HEMT technology
  • Ultra-low on Resistance

Key applications

  • High-side load switch
  • OVP protection in smartphone USB port
  • Switch circuits in multiple power supplier systems

Reference Design for OVP Application

Key specifications

  • Vin:8 ~ 22 V
  • Controller IC: SC8571
  • Iomax:14 A

Key applications

  • Bi-directional switch
  • OVP Application
  • OCP Application

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