Diamfab, a semiconductor diamond deep-tech company, and HiQuTe Diamond, a plasma-assisted CVD synthetic diamond startup, have announced a strategic technological partnership. This partnership encompasses the critical phases of the value chain, from the production of substrates to the production of electronic components, through the epitaxy of doped layers.

HiQuTe Diamond will leverage its distinctive expertise in producing high-quality diamond substrates, specifically engineered to optimize the performance of power electronics devices. Diamfab will be accountable for producing high-performance components and the epitaxial growth of doped layers using advanced crystal growth procedures.

Both enterprises are derived from internationally recognized CNRS laboratories: the Institut Néel for Diamfab and the LSPM (Laboratoire des Sciences des Procédés et des Matériaux) for HiQuTe Diamond. As a result of their combined research experience of over 30 years, the two companies possess distinctive expertise that positions France at the vanguard of innovation in semiconductor diamonds.

This partnership is the first of its kind in the world to achieve high quality in both the academic and industrial sectors by combining mastery of the three critical stages – substrate, epitaxy, and manufacturing. To transform diamond semiconductors into an industrial reality, the two companies will be able to accelerate iteration cycles and achieve unprecedented technical and financial performance as a result of their industrial agility and geographical proximity.

At the core of the global economy’s expansion are power semiconductors, as per Diamfab. Diamond semiconductors are essential for the widespread adoption of electrification and the decarbonization of entire sectors of the economy, as they exhibit performance levels that are 10 to 40 times greater than those of components made from conventional materials. Diamfab possesses the technological, human, and geographical resources, as well as the will, to establish this sector of excellence in France through its collaboration with HiQuTe Diamond.

According to HiQuTe Diamond, the plasma-assisted CVD growth process enables the production of boron-doped diamonds that are specially designed for the rigorous applications of power electronics. This sustainable procedure guarantees the strict regulation of physical properties while simultaneously addressing performance challenges. The convergence of our expertise and that of Diamfab presents unparalleled opportunities to address global industrial challenges in terms of energy efficiency and performance.

The two organizations intend to commence their partnership by producing a preliminary series of vertical Schottky diodes on HiQuTe Diamond substrates. This will be achieved through the optimization of diamond epitaxy by Diamfab. The initial prototypes, which are anticipated to be released in Spring 2025, will represent a significant technological advancement, thereby facilitating the industrialization of diamond semiconductors. This will be a significant turning point for the high-performance industries.

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