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Power Electronics Newsletter - May 24, 2022

24 May, 2022 Newsletter - everything PE

Top stories and products this week. View it in your browser

 
Weekly Edition
Date: 24 May, 2022
 
Sponsored by PEMD 2022
 
 
Latest Power Electronics News
News
MIT Engineers Design Highly Efficient Heat Engine with no Moving Parts

MIT

News
Power Integrations Launches Automotive Qualified Gate Driver for SiC MOSFETs & Si IGBTs

Power Integrations

News
GaN Systems and xFusion Introduces 3 kW AC/DC Power Supply Unit for Data Center Industry

GaN Systems

News
Danisense Launches Flux Gate Technology Current Transducers for DC & AC Current Measurement

Danisense

News
ROHM Introduces 4th Generation SiC MOSFETs at PCIM 2022

ROHM Semiconductor

News
Qorvo Announces 1200 V SiC MOSFETs for Induction Heating and Power Supply Applications

Qorvo

News
STMicroelectronics Partner with Semikron to Integrate SiC Power Technology in EV Drives

STMicroelectronics

News
Nexperia Introduces Application Specific MOSFETs for Automotive Airbags

Nexperia

News
AES Sign Agreement with Microsoft to Provide Renewable Energy to its Data Centers

AES

News
Boeing Satellites uses Radiation Fault Tolerant DC-DC Converters from Vicor

Vicor

New White Papers & Articles
Paralleling power MOSFETs in high power applications - Nexperia
EiceDRIVER- Gate resistor for power devices - Infineon Technologies
eGaN FETs and ICs for Wireless Power Applications - Efficient Power Conversion
Using IGBT Modules - Mitsubishi Electric
MPQ8875A – 36 V, 5 A, 4-Switch Synchronous Buck-Boost Converter - Monolithic Power Systems
More Whitepapers
Sponsored by PEMD 2022
 
 
Featured Products this Week
Power Diode
Trench Schottky Barrier Diode for Portable Applications
Power Diode  from Diodes Incorporated

The SDT4U40EP3 from Diodes Incorporated is a Trench Schottky Barrier Diode that is optimized for low forward voltage drop and low leakage current. It has a forward current of 4 A and a forward voltage of 0.55 V. This power diode has a repetitive peak reverse voltage of up to 40 V and a reverse current of up to 150 µA. It has a low forward voltage that minimizes conduction losses and improves efficiency.
Download Datasheet Product Details
MOSFET
600 V N-Channel Enhancement Mode MOSFET
MOSFET  from ROHM Semiconductor

The R6077VNZ4 from ROHM Semiconductors is an N-Channel Enhancement Mode Power MOSFET. This Power MOSFET has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 5.5 V, and a drain-source resistance of 42 milli-ohm. It has a continuous drain current of up to 77 A and a pulsed drain current of less than 231 A. This MOSFET has a power dissipation of up to 781 W.
Download Datasheet Product Details
IGBT
650 V Automotive Qualified Field Stop Trench IGBT
IGBT  from Infineon Technologies

The AIKB30N65DH5 from Infineon Technologies is an Automotive-Qualified Field Stop Trench IGBT. It has a collector-emitter breakdown voltage of over 650 V, collector-emitter saturation voltage of 1.95 V, and a gate-emitter threshold voltage of 4.0 V. This IGBT has a DC collector current of up to 55 A, peak collector current of less than 90 A, and a gate-emitter leakage current of less than 100 nA.
Download Datasheet Product Details
AC to DC Converter
300 W AC-DC Converters for Medical and Space Applications
AC to DC Converter  from Traco Power

The TPI-300-M Series from Traco Power are Isolated AC-DC Converters that convert an AC input voltage of 85 V to 264 V to a DC output voltage of 12 V to 53 V. They have a DC input voltage of 120 V to 370 V. These converters deliver an output power of up to 300 W and has an efficiency of 93%. They provide a switching frequency of 140 kHz. These controlled rectifiers are available as a chassis mount unit.
Download Datasheet Product Details
MOSFET
N-Channel Enhancement Mode MOSFET for Switching Applications
MOSFET  from STMicroelectronics

The STP65N045M9 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate-source threshold voltage of 3.7 V, and a drain-source resistance of less than 45 milli-ohm. This Power MOSFET has a continuous drain current of up to 55 A and a pulsed drain current of 170 A. It has a power dissipation of up to 245 W.
Download Datasheet Product Details
MOSFET
1200 V N-Channel Enhancement Mode SiC MOSFET
MOSFET  from Hitachi

The 5SFG 0580B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of 2.4 V. It has a drain-source breakdown voltage of less than 1200 V and a drain-source on-state resistance of 2.9 milli-ohm. This SiC MOSFET has a continuous drain current of up to 580 A.
Download Datasheet Product Details
Gate Driver
ASIL Certified Dual-Channel Gate Driver
Gate Driver  from Power Integrations

The 2SP0215F2Q0C from Power Integrations is Automotive Qualified Dual-Channel Gate Driver that is designed for driving IGBT switches. This plug & play gate driver has an input voltage of 15 V and has an output current of -15 to 20 A. It has a rise time of 5 ns and a fall time of 10 ns. This gate driver integrates FluxLink technology to reinforce the isolation barrier between the primary side and secondary side.
Download Datasheet Product Details
MOSFET
N-Channel Enhancement Mode SiC MOSFET
MOSFET  from Qorvo

The UF4SC120023K4S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. It has a gate-source voltage of up to 25 V and a gate threshold voltage of 4.8 V. This SiC MOSET has a drain-source breakdown voltage of over 1200 V.
Download Datasheet Product Details
GaN Power Transistor
100 V E-Mode GaN Power Transistor for Charging Applications
GaN Power Transistor  from GaN Systems

The GS61008P from GaN Systems is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of less than 100 V and a gate-source threshold voltage of 1.7 V. This GaN transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 140 A. It has a drain-source on-resistance of 7 milli-ohm. This GaN transistor is manufactured based on patented Island Technology.
Download Datasheet Product Details
MOSFET
N-Channel Logic Level MOSFET for Automotive Applications
MOSFET  from Nexperia

Nexperia is an Automotive-Qualified N-Channel Logic Level MOSFET. It has a drain-source breakdown voltage over 60 V, a gate threshold voltage of 1.67 V, and a drain-source on-resistance of 10.4 milli-ohm. It has a continuous drain current of less than 40 A, and power dissipation of 79.4 W. This AEC-Q101 qualified MOSFET uses LFPAK copper clip package technology.
Download Datasheet Product Details
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