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2SC2712-G

Bipolar Junction Transistor by AiT Semiconductor (87 more products)
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2SC2712-G Image

The 2SC2712-G from AiT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 0.1 µA, Collector Base Voltage 60 V, Collector Cut off Current 0.1 µA, Collector Emitter Breakdown Voltage 50 V. Tags: Surface Mount, NPN Transistor. More details for 2SC2712-G can be seen below.

Product Specifications

Product Details

  • Part Number
    2SC2712-G
  • Manufacturer
    AiT Semiconductor
  • Description
    50 V, 0.15 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    0.1 µA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    0.1 µA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    0.15 A
  • DC Current Gain
    200 to 400
  • Gain Bandwidth Product
    80 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    150 mW
  • Output Capacitance
    2 to 3.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    Low-Frequency Amplifiers, Audio frequency general purpose amplifier applications, AM Amplifiers

Technical Documents
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