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BCY58-IX

Bipolar Junction Transistor by Central Semiconductor (585 more products)
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BCY58-IX Image

The BCY58-IX from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 7 V, Base Emitter Saturation Voltage 0.6 to 1.2 V, Emitter Cut off Current 10 nA, Collector Base Voltage 32 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for BCY58-IX can be seen below.

Product Specifications

Product Details

  • Part Number
    BCY58-IX
  • Manufacturer
    Central Semiconductor
  • Description
    32 V, 100 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    7 V
  • Base Emitter Saturation Voltage
    0.6 to 1.2 V
  • Emitter Cut off Current
    10 nA
  • Collector Base Voltage
    32 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    32 V
  • Collector Emitter Voltage
    32 V
  • Continuous Collector Current
    100 mA
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    40 to 630
  • Gain Bandwidth Product
    150 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.34 to 1 W
  • Output Capacitance
    5 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-18
  • Application
    Low noise amplifier and switching applications

Technical Documents
View details on the manufacturer's website
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