BTN5551K3-0-TB-G

Bipolar Junction Transistor by Cystech Electronics (274 more products)

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The BTN5551K3-0-TB-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 nA, Collector Base Voltage 180 V, Collector Cut off Current 50 nA. Tags: Through Hole, NPN Transistor. More details for BTN5551K3-0-TB-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTN5551K3-0-TB-G
  • Manufacturer
    Cystech Electronics
  • Description
    160 V, 600 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    600 mA
  • Pulse Collector Current
    2 A
  • DC Current Gain
    50 to 270
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    900 mW
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92L

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