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BC807-25-7-F

Bipolar Junction Transistor by Diodes Incorporated (45 more products)
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The BC807-25-7-F from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Base Emitter Saturation Voltage -1.2 V, Emitter Cut off Current -100 nA, Collector Base Voltage -50 V, Collector Cut off Current -5 µA. Tags: Surface Mount, PNP Transistor. More details for BC807-25-7-F can be seen below.

Product Specifications

Product Details

  • Part Number
    BC807-25-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    -45 V, -0.5 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -1.2 V
  • Emitter Cut off Current
    -100 nA
  • Collector Base Voltage
    -50 V
  • Collector Cut off Current
    -5 µA
  • Collector Emitter Breakdown Voltage
    -45 V
  • Collector Emitter Voltage
    -45 V
  • Continuous Collector Current
    -0.5 A
  • Pulse Collector Current
    -1 A
  • DC Current Gain
    100 to 400
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    310 mW
  • Output Capacitance
    12 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    For switching and AF Amplifier Applications.
  • Note
    Weight :- 0.008 grams, Qualified to AEC-Q100/101/200

Technical Documents
View details on the manufacturer's website
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