MMBT3906T-7-F

Bipolar Junction Transistor by Diodes Incorporated (105 more products)

Note : Your request will be directed to Diodes Incorporated.

MMBT3906T-7-F Image

The MMBT3906T-7-F from Diodes Incorporated is a PNP Small Signal Transistor. It has a collector-emitter breakdown voltage of over -40 V, a base-emitter voltage of up to -5 V, and a collector-emitter saturation voltage of less than -0.4 V. This transistor has a collector current of up to -200 A and a collector cutoff current of less than -50 nA. It provides a junction-to-ambient thermal resistance of up to 833°C/W. This RoHS-compliant transistor is available in a surface-mount package that measures 1.70 x 0.85 mm.

Product Specifications

Product Details

  • Part Number
    MMBT3906T-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    -40 V PNP Small Signal Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Base Emitter Saturation Voltage
    -0.65 to -0.95 V
  • Collector Base Voltage
    -40 V
  • Collector Cut off Current
    -50 nA
  • Collector Emitter Breakdown Voltage
    -40 V
  • Collector Emitter Voltage
    -40 V
  • Continuous Collector Current
    -0.2 A
  • DC Current Gain
    30 to 300
  • Gain Bandwidth Product
    250 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    150 mW
  • Output Capacitance
    4.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Dimension
    1.70 x 0.85 mm
  • Note
    Weight :- 0.02 grams, AEC-Q101 Qualified

Technical Documents