MMSTA13-7-F

Bipolar Junction Transistor by Diodes Incorporated (105 more products)

Note : Your request will be directed to Diodes Incorporated.

The MMSTA13-7-F from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage 10 V, Base Emitter Saturation Voltage 2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 30 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for MMSTA13-7-F can be seen below.

Product Specifications

Product Details

  • Part Number
    MMSTA13-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, 0.3 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Base Emitter Saturation Voltage
    2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    30 V
  • Collector Emitter Voltage
    30 V
  • Continuous Collector Current
    0.3 A
  • DC Current Gain
    10000
  • Gain Bandwidth Product
    125 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    8 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Note
    Weight :- 0.06 grams

Technical Documents