KTB1151-O

Bipolar Junction Transistor by KEC Semiconductor (242 more products)

Note : Your request will be directed to KEC Semiconductor.

The KTB1151-O from KEC Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -7 V, Base Emitter Saturation Voltage -1.2 to -0.9 V, Emitter Cut off Current -10 µA, Collector Base Voltage -60 V, Collector Cut off Current -10 µA. Tags: Through Hole, PNP Transistor. More details for KTB1151-O can be seen below.

Product Specifications

Product Details

  • Part Number
    KTB1151-O
  • Manufacturer
    KEC Semiconductor
  • Description
    -60 V, -5 A, PNP General Purpose Bipolar Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    -7 V
  • Base Emitter Saturation Voltage
    -1.2 to -0.9 V
  • Emitter Cut off Current
    -10 µA
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    -10 µA
  • Collector Emitter Breakdown Voltage
    -60 V
  • Collector Emitter Voltage
    -60 V
  • Continuous Collector Current
    -5 A
  • Pulse Collector Current
    -8 A
  • DC Current Gain
    160 to 320
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1.5 to 20 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-126
  • Application
    General Purpose Application