3DG3332

Bipolar Junction Transistor by Lision Technology (660 more products)

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The 3DG3332 from Lision Technology is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Collector Base Voltage 180 V, Collector Emitter Breakdown Voltage 160 V, Collector Emitter Voltage 160 V, Continuous Collector Current 700 mA. Tags: Through Hole, NPN Transistor. More details for 3DG3332 can be seen below.

Product Specifications

Product Details

  • Part Number
    3DG3332
  • Manufacturer
    Lision Technology
  • Description
    160 V, 700 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Collector Base Voltage
    180 V
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    700 mA
  • DC Current Gain
    100 to 400
  • Gain Bandwidth Product
    120 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    625 mW
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92