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LST955

Bipolar Junction Transistor by Lision Technology (660 more products)
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The LST955 from Lision Technology is an NPN Bipolar Junction Transistor. It has a collector-emitter breakdown voltage of 140 V, a base-emitter voltage of 6 V, and a collector-emitter saturation voltage of less than 0.37 V. This transistor has a collector current of 4000 mA and a power dissipation of 1000 mW. It is available in a surface-mount package.

Product Specifications

Product Details

  • Part Number
    LST955
  • Manufacturer
    Lision Technology
  • Description
    140 V NPN Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Collector Base Voltage
    180 V
  • Collector Emitter Breakdown Voltage
    140 V
  • Collector Emitter Voltage
    140 V
  • Continuous Collector Current
    4000 mA
  • DC Current Gain
    110 to 300
  • Gain Bandwidth Product
    110 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1000 mW
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
View details on the manufacturer's website
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