MJD112

Bipolar Junction Transistor by Lision Technology (660 more products)

Note : Your request will be directed to Lision Technology.

The MJD112 from Lision Technology is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Collector Base Voltage 100 V, Collector Emitter Breakdown Voltage 100 V, Collector Emitter Voltage 100 V, Continuous Collector Current 2000 mA. Tags: Through Hole, NPN Transistor. More details for MJD112 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJD112
  • Manufacturer
    Lision Technology
  • Description
    100 V, 2000 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Collector Base Voltage
    100 V
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    2000 mA
  • DC Current Gain
    1000 to 12000
  • Gain Bandwidth Product
    25 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1500 mW
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Note
    Optional Package :- TO-252