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2SB817D

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)
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2SB817D Image

The 2SB817D from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Emitter Cut off Current 100 µA, Collector Base Voltage 160 V, Collector Cut off Current 100 µA, Collector Emitter Breakdown Voltage 140 V. Tags: Through Hole, PNP Transistor. More details for 2SB817D can be seen below.

Product Specifications

Product Details

  • Part Number
    2SB817D
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    160 V, 12 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    160 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    140 V
  • Collector Emitter Voltage
    140 V
  • Continuous Collector Current
    12 A
  • Pulse Collector Current
    15 A
  • DC Current Gain
    60 to 120
  • Industry
    Industrial, Commercial
  • Power Dissipation
    100 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247(3P)
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website
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