2SD634

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (461 more products)

Note : Your request will be directed to MOSPEC SEMICONDUCTOR.

The 2SD634 from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 3 mA, Collector Base Voltage 80 V, Collector Cut off Current 100 µA. Tags: Through Hole, NPN Transistor. More details for 2SD634 can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD634
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    80 V, 7 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    3 mA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    7 A
  • Pulse Collector Current
    10 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents