Bipolar Junction Transistor by Nexperia (451 more products)

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BCX55-10 Image

The BCX55-10 from Nexperia is an Automotive Qualified Medium Power NPN Transistor that is ideal for power management, low-side switches, MOSFET drivers, battery-driven devices, linear voltage regulators, and amplifier applications. It has a collector-emitter breakdown voltage of over 5 V, a base-emitter voltage of up to 1 V, and a saturated collector-emitter voltage of less than 0.5 V. This transistor has a base current of up to 0.3 A and a collector current of less than 1 A. It provides a high current with three separate current gain selection options and has a high power dissipation capability. This AEC-Q101-qualified transistor includes an exposed heatsink for excellent thermal and electrical conductivity. It is available in a surface-mount package that measures 4.6 x 2.6 x 1.6 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
  • Description
    Automotive Qualified Medium Power NPN Transistor


  • Type
    NPN Transistor
  • Polarity
  • Emitter Base Voltage
    1 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    0.1 to 10 µA
  • Collector Emitter Breakdown Voltage
    5 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • DC Current Gain
    40 to 160
  • Gain Bandwidth Product
    100 to 180 MHz
  • Industry
  • Power Dissipation
    0.5 to 1.35 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Application
    Linear voltage regulators, MOSFET drivers, Low-side switches, Battery-driven devices, Power management, Amplifiers
  • Dimension
    4.6 x 2.6 x 1.6 mm

Technical Documents