8050SST-B

Bipolar Junction Transistor by SeCoS Corporation (664 more products)

Note : Your request will be directed to SeCoS Corporation.

The 8050SST-B from SeCoS Corporation is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.2 V, Emitter Cut off Current 0.1 µA, Collector Base Voltage 40 V, Collector Cut off Current 0.1 µA. Tags: Through Hole, NPN Transistor. More details for 8050SST-B can be seen below.

Product Specifications

Product Details

  • Part Number
    8050SST-B
  • Manufacturer
    SeCoS Corporation
  • Description
    25 V, 1500 mA, NPN Small Signal Bipolar Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Emitter Cut off Current
    0.1 µA
  • Collector Base Voltage
    40 V
  • Collector Cut off Current
    0.1 µA
  • Collector Emitter Breakdown Voltage
    25 V
  • Collector Emitter Voltage
    25 V
  • Continuous Collector Current
    1500 mA
  • DC Current Gain
    85 to 160
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1000 mW
  • Output Capacitance
    15 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    General Purpose Switching and Amplification

Technical Documents