PHE13007,127

Bipolar Junction Transistor by WeEN Semiconductors (32 more products)

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The PHE13007,127 from WeEN Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 0.92 to 1.2 V, Emitter Cut off Current 1 mA, Collector Base Voltage 700 V, Collector Cut off Current 0.2 to 1 mA. Tags: Through Hole, NPN Transistor. More details for PHE13007,127 can be seen below.

Product Specifications

Product Details

  • Part Number
    PHE13007,127
  • Manufacturer
    WeEN Semiconductors
  • Description
    400 V, 8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    0.92 to 1.2 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    700 V
  • Collector Cut off Current
    0.2 to 1 mA
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    16 A
  • DC Current Gain
    8 to 40
  • Industry
    Industrial, Commercial
  • Power Dissipation
    80 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Application
    High frequency electronic lighting ballast applications, Converters, Inverters, Switching regulators, Motor control systems