The CGD65A055SH2 from Cambridge GaN Devices is an Enhancement Mode GaN-on-Silicon Power Transistor. The transistor has a drain-source breakdown voltage of 650 V, a gate threshold voltage of 20 V, and a drain-source on-resistance of 55 milli-ohms. It has a continuous drain current of 27 A. This transistor has been designed with a monolithically integrated interface and protection circuit while providing unmatched gate reliability. It is based on ICeGaN technology that offers improved reliability over multichip, external interface circuits, and other monolithically integrated driver HEMTs. This power transistor incorporates an advanced NL³ circuit topology, leading to low power losses under no load and light load conditions while eliminating the need for negative gate voltages, and achieving true zero-volt turn-off. It integrates a current sense function that reduces power dissipation and allows direct connection to the ground for optimized cooling and EMI.
This GaN transistor is available in a surface-mount package that measures 8 x 8 mm and is ideal for PSUs, industrial SMPS, and inverters, AC/DC and DC/DC converters, AC inverters, server power, and data centers, telecom rectifiers, gaming PSUs, PC power, LED drivers, high power class D audio amplifiers, general purpose SMPS-based power supplies, and PV inverter applications.