EPC2022

GaN Power Transistor by Efficient Power Conversion (90 more products)

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EPC2022 Image

The EPC2022 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 2.4 to 3.2 milli-ohm, Continous Drain Current 90 A, Pulsed Drain Current 390 A. Tags: Die. More details for EPC2022 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2022
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    2.4 to 3.2 milli-ohm
  • Continous Drain Current
    90 A
  • Pulsed Drain Current
    390 A
  • Total Charge
    13 to 16 nC
  • Input Capacitance
    1400 to 1690 pF
  • Output Capacitance
    840 to 1260 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    High-Frequency DC-DC Conversion, Industrial Automation, Synchronous Rectification, Class-D Audio, Low Inductance Motor Drives
  • Dimensions
    6.05 x 2.3 mm

Technical Documents