The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V with a drain-source on-resistance of 55 milliohms and a gate threshold voltage of 1.3 V. This GaN transistor has a continuous drain current of 6.3 A, and pulsed drain current of 26 A. It has low drain-source on-resistance, higher switching frequency, and lower drive power. This RoHS-compliant GaN transistor offers higher efficiency, lower conduction losses, and zero reverse recovery losses. It is available as a die that measures 1.95 x 1.95 mm and is ideal for high voltage DC-DC converters, SMPS & UPS, solar power inverters and BMC, battery management systems, DC-AC inverters, Class D audio, lidar, medical imaging, RF frequency switch, consumer & industrial wiring, multi-level AC-DC conversion, EV charging, motor drives, wireless power Class-E amplifiers and LED lighting applications.