EPC2050

GaN Power Transistor by Efficient Power Conversion (70 more products)

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EPC2050 Image

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V with a drain-source on-resistance of 55 milliohms and a gate threshold voltage of 1.3 V. This GaN transistor has a continuous drain current of 6.3 A, and pulsed drain current of 26 A. It has low drain-source on-resistance, higher switching frequency, and lower drive power. This RoHS-compliant GaN transistor offers higher efficiency, lower conduction losses, and zero reverse recovery losses. It is available as a die that measures 1.95 x 1.95 mm and is ideal for high voltage DC-DC converters, SMPS & UPS, solar power inverters and BMC, battery management systems, DC-AC inverters, Class D audio, lidar, medical imaging, RF frequency switch, consumer & industrial wiring, multi-level AC-DC conversion, EV charging, motor drives, wireless power Class-E amplifiers and LED lighting applications.

Product Specifications

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Product Details

  • Part Number
    EPC2050
  • Manufacturer
    Efficient Power Conversion
  • Description
    350 V Enhancement Mode GaN Power Transistor

General

  • Gate Threshold Voltage
    1.3 V
  • Drain Source Voltage
    350 V
  • Drain Source Resistance
    55 milliohms
  • Continous Drain Current
    6.3 A
  • Pulsed Drain Current
    26 A
  • Total Charge
    2.9 to 4 nC
  • Input Capacitance
    423 to 628 pF
  • Output Capacitance
    81 to 122 pF
  • Temperature operating range
    -40 to 150 degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    Class D Audio, LED Lighting, Lidar, Motor Drive, High Voltage DC-DC Converter, SMPS & UPS, Solar Power Inverters and BMC, Battery Management Systems, DC-AC Inverters, Medical Imaging, RF Frequency Switch, Consumer & Industrial Wiring, Multi-Level AC-DC Conversion, EV Charging, Wireless Power Class-E Amplifiers
  • Dimensions
    1.95 x 1.95 mm

Technical Documents