EPC2059

GaN Power Transistor by Efficient Power Conversion (90 more products)

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EPC2059 Image

The EPC2059 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 170 V, Drain Source Resistance 6.8 to 9 milli-ohm, Continous Drain Current 24 A, Pulsed Drain Current 102 A. Tags: Die. More details for EPC2059 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2059
  • Manufacturer
    Efficient Power Conversion
  • Description
    170 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    170 V
  • Drain Source Resistance
    6.8 to 9 milli-ohm
  • Continous Drain Current
    24 A
  • Pulsed Drain Current
    102 A
  • Total Charge
    5.7 to 7.4 nC
  • Input Capacitance
    633 to 836 pF
  • Output Capacitance
    267 to 401 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    DC-DC Converters, Sync rectification for AC/DC & DC-DC, USB-C PD Quick Chargers & Adaptors, BLDC Motor Drives, Lidar, Class-D Audio
  • Dimensions
    2.8 x 1.4 mm

Technical Documents