The EPC2067 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. This transistor has a drain-to-source voltage of over 40 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of 1.3 milli-ohms. It has a continuous drain current of up to 69 A and a pulsed drain current of less than 409 A. This power transistor offers extremely high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values. It consists of a lateral structure that provides low gate charge and integrates a majority charge carrier diode that offers zero reverse recovery charge.
This RoHS-compliant power transistor is available as a passivated die that measures 2.85 x 3.25 mm and is ideal for high-frequency DC-DC converters, BLDC motor drives, and sync rectification for AC-DC and DC-DC applications.