GaN Power Transistor by Efficient Power Conversion (85 more products)

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EPC2067 Image

The EPC2067 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. This transistor has a drain-to-source voltage of over 40 V, a gate threshold voltage of 1 V, and a drain-source on-resistance of 1.3 milli-ohms. It has a continuous drain current of up to 69 A and a pulsed drain current of less than 409 A. This power transistor offers extremely high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values. It consists of a lateral structure that provides low gate charge and integrates a majority charge carrier diode that offers zero reverse recovery charge.

This RoHS-compliant power transistor is available as a passivated die that measures 2.85 x 3.25 mm and is ideal for high-frequency DC-DC converters, BLDC motor drives, and sync rectification for AC-DC and DC-DC applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    40 V Enhancement Mode GaN Power Transistor


  • Configuration
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    1.3 milli-ohm
  • Continous Drain Current
    69 A
  • Pulsed Drain Current
    409 A
  • Total Charge
    17.1 nC
  • Input Capacitance
    2178 pF
  • Output Capacitance
    1071 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
  • Package Type
  • Applications
    High frequency DC-DC Converters, BLDC Motor Drives, Sync Rectification for AC-DC and DC-DC
  • Dimensions
    2.85 x 3.25 mm

Technical Documents