The EPC2070 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for high-frequency DC-DC from 48 V - 60 V input, ToF module using Vcsel laser for camera modules, laptops, and smartphones, open rack server architectures, lidar/pulsed power applications, power supplies, class D audio, LED lighting, and low inductance motor drive applications. This transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.3 V, and a drain-source on-resistance of less than 23 milli-ohms. It has a continuous drain current of up to 1.7 A and a pulsed drain current of less than 34 A. This GaN transistor has exceptionally high electron mobility and low-temperature coefficient, allowing very low drain-source on-resistance while its lateral device structure and integration of majority carrier diode provide exceptionally low gate charge and zero reverse recovery charge that result in high switching frequency and low on-time. It is available as a passivated die that measures 1.3 x 0.85 mm.