GaN Power Transistor by Efficient Power Conversion (74 more products)

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EPC2204 Image

The EPC2204 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for DC-DC converters, isolated DC-DC converters, lidar, point of load converters, USB-C, LED lighting, class-D audio, E-mobility applications. It has a drain-source voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 4.4 milli-ohms. This transistor has a continuous drain current of up to 29 A and a pulsed drain current of less than 125 A. It offers high electron mobility and has a low-temperature coefficient that results in a very low drain-source on-resistance value.

This RoHS-compliant transistor has a lateral structure that provides an exceptionally low gate charge and integrates a majority carrier diode that ensures zero reverse recovery charge. It is available as a die that measures 2.5 x 1.5 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.1 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    4.4 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    125 A
  • Total Charge
    5.7 to 7.4 nC
  • Input Capacitance
    644 to 851 pF
  • Output Capacitance
    304 to 456 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    DC-DC Converters, Isolated DC-DC Converters, Lidar, Point of Load Converters, USB-C, LED Lighting, Class-D Audio, E-Mobility
  • Dimensions
    2.5 x 1.5 mm

Technical Documents