EPC2214

GaN Power Transistor by Efficient Power Conversion (90 more products)

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EPC2214 Image

The EPC2214 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 80 V, Drain Source Resistance 15 to 20 milli-ohm, Continous Drain Current 10 A, Pulsed Drain Current 47 A. Tags: Die. More details for EPC2214 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2214
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    15 to 20 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    47 A
  • Total Charge
    1.8 to 2.2 nC
  • Input Capacitance
    198 to 238 pF
  • Output Capacitance
    129 to 194 pF
  • Temperature operating range
    -40 to +150 °C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    BGA
  • Applications
    DC-DC Conversion, Wireless Power Transfer, Lidar/Pulsed Power Applications Sensing (Lidar)
  • Dimensions
    1.35 x 1.35 mm

Technical Documents