GaN Power Transistor by Efficient Power Conversion (90 more products)

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EPC2218 Image

The EPC2218 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for BLDC motor drives, class-D audio, DC-DC converters, sync rectification for AC/DC & DC-DC converters, lidar/pulsed power, and LED lighting applications. It has a drain-to-source voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 2.4 mΩ. This GaN transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 231 A.

The EPC2218 offers exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance.  It consists of a lateral structure that provides a low total gate charge and integrates a majority charge carrier diode that ensures zero reverse recovery charge. This RoHS-compliant power transistor is available as a passivated die that measures 3.5 x 1.95 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement-Mode GaN Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.1 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    2.4 milli-ohm
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    231 A
  • Total Charge
    10.5 to 13.6 nC
  • Input Capacitance
    1189 to 1570 pF
  • Output Capacitance
    562 to 843 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
  • Package Type
  • Package
  • Applications
    DC-DC Converters, Isolated DC-DC Converters, Lidar, Point of Load Converters, USB-C, LED Lighting, Class-D Audio, E-Mobility
  • Dimensions
    3.5 x 1.95 mm

Technical Documents