GaN Power Transistor by Efficient Power Conversion (74 more products)

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EPC2221 Image

The EPC2221 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor suitable for multi-channel lidar applications. It has a drain-source voltage of 100 V with a drain-source resistance of up to 58 milliohms and a gate threshold voltage of up to 2.5 V. This dual-mode GaN transistor has a continuous drain current of 5 A and a pulsed drain current of 20 A. It has low inductance and capacitance that allows fast switching and narrow pulse widths for high resolution and high efficiency. This AEC-Q101 qualified transistor has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance. The lateral structure of this transistor provides a very low gate charge, and zero reverse recovery charge. It is available in a passivated die package that measures 1.35 x 1.35 mm and is ideal for automotive Lidar/ToF, high-frequency DC-DC, and wireless power applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V GaN Power Transistor for Multi-Channel Lidar Applications


  • Configuration
  • Gate Threshold Voltage
    2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    58 milliohms
  • Continous Drain Current
    5 A
  • Pulsed Drain Current
    20 A
  • Total Charge
    0.8 to 1.2 nC
  • Input Capacitance
    94 to 150 pF
  • Output Capacitance
    63 to 72 pF
  • Temperature operating range
    -40 to 150 degree C
  • Qualification
  • RoHS Compliant
  • Package Type
  • Applications
    Automotive, High Frequency DC-DC Conversion, Synchronous Rectification, Wireless Power
  • Dimensions
    1.35 x 1.35 mm

Technical Documents

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