GaN Power Transistor by Efficient Power Conversion (79 more products)

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EPC2304 Image

The EPC2304 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that has been designed to exhibit very high switching frequency, high efficiency, and low on-time characteristics in a very small footprint. It has a drain-source voltage of over 200 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 3.1 milli-ohms. This transistor has a continuous drain current of up to 102 A and a pulsed drain current of less than 260 A. It is based on GaN semiconductor technology that offers exceptionally high electron mobility and a low-temperature coefficient, thereby resulting in a very low drain-source on-resistance.

This RoHS-compliant power transistor has a lateral structure that provides low gate charge and integrates a majority charge carrier diode that ensures zero reverse recovery charge. It is available in a thermally enhanced surface-mount package that measures 3 x 5 mm and is ideal for synchronous rectification, AC/DC chargers, SMPS, adaptors, high-frequency DC-DC conversion, class D audio, high-power lidar and dToF, wireless power applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V N-Channel Enhancement Mode GaN Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.1 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    3.1 milli-ohm
  • Continous Drain Current
    102 A
  • Pulsed Drain Current
    260 A
  • Total Charge
    24 nC
  • Input Capacitance
    3195 pF
  • Output Capacitance
    649 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Synchronous Rectification, AC/DC Chargers, SMPS, Adaptors, High Frequency DC-DC Conversion, Class D audio, Wireless Power, High Power Lidar & dToF
  • Dimensions
    3 mm x 5 mm

Technical Documents