GaN Power Transistor by Efficient Power Conversion (74 more products)

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EPC2619 Image

The EPC2619 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for Class-D audio, isolated DC-DC converters, DC-DC converters, solar optimizers, battery chargers, storage, stabilizers, eBikes, eScooters, DC Servo USB PD 3.1 chargers, point-of-load converters, and medical robotics applications. It has a drain-source voltage of over 80 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 3.3 milli-ohms. This transistor has a continuous drain current of up to 29 A and a pulsed drain current of less than 164 A. It offers high electron mobility and a low-temperature coefficient that results in a very low drain-source on-resistance value.

This RoHS-compliant transistor has a lateral structure that provides an exceptionally low gate charge and integrates a majority carrier diode that ensures zero reverse recovery charge. It is available as a die that measures 2.5 x 1.5 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    80 V N-Channel Enhancement Mode GaN Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.1 V
  • Drain Source Voltage
    80 V
  • Drain Source Resistance
    3.3 milli-ohm
  • Continous Drain Current
    29 A
  • Pulsed Drain Current
    164 A
  • Total Charge
    8.3 nC
  • Input Capacitance
    1180 pF
  • Output Capacitance
    310 pF
  • Temperature operating range
    -40 to 150 degree C
  • RoHS Compliant
  • Package Type
  • Applications
    DC-DC Converters, Isolated DC-DC Converters, Sync Rectification to 12 - 20 V, Battery Chargers, Storage, and Stabilizers, Solar Optimizers, Motor Drive, Power Tools, eBikes and eScooters, Robots, DC Servo, Medical Robots and DC-DC, Class D Audio, USB PD 3.1 Chargers, Point of Load Converters
  • Dimensions
    2.5 mm x 1.5 mm

Technical Documents

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