GaN Power Transistor by Efficient Power Conversion (90 more products)

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EPC7004 Image

The EPC7004 from Efficient Power Conversion is a Radiation Hard eGaN Power Transistor. It has a drain-to-source voltage of over 100 V, a gate-to-source voltage of up to 6 V, and a drain-source on-resistance of 5 mΩ. This GaN power transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 160 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance. This EPC7004 consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. It is available as a passivated die that measures 4.1 x 1.6 mm and is ideal for commercial satellite EPS, ion thrusters, high-frequency radiation-hard DC-DC converters, deep space probes, radiation hard motor drives, space applications: DC-DC power, motor drives, lidar, and avionics applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    Radiation-Hard GaN Power Transistor for LiDAR and Deep Space Applications


  • Configuration
  • Industry
    Commercial, Space
  • Gate Threshold Voltage
    1.4 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5 milli-ohm
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    160 A
  • Total Charge
    6.4 nC
  • Input Capacitance
    817 pF
  • Output Capacitance
    485 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
  • Applications
    Space Applications, DC-DC power, motor drives, lidar, ion thrusters, Commercial satellite EPS & avionics, Deep space probes, High frequency rad hard DC-DC conversion, Rad hard motor drives
  • Dimensions
    4.1 mm x 1.6 mm

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